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Metal Gate Technology for Advanced CMOS Devices
The development and implementation of a metal gate technology (alloy, compound, or silicide) into metal-oxide-semiconductor field effect transistors (MOSFETs) is necessary to extend the life of planar CMOS devices and enable further downscaling. This thesis examines possible metal gate materials for improving the performance of the gate stack and discusses process integration as well as improve…
Contributors
- Olsson Jörgen Docent
- de Gendt Stefan Associate Professor
- Uppsala universitet Teknisk-naturvetenskapliga vetenskapsområdet Tekniska sektionen Institutionen för teknikvetenskaper Fasta tillståndets elektronik
Creator
- Sjöblom Gustaf 1975- , Uppsala universitet, Fasta tillståndets elektronik
Publisher
- Acta Universitatis Upsaliensis
Date
- 2006
- 2006-09-29
- 2006-09-08
- 2006-09-08
- 2006-09-29
- 2006
Contributors
- Olsson Jörgen Docent
- de Gendt Stefan Associate Professor
- Uppsala universitet Teknisk-naturvetenskapliga vetenskapsområdet Tekniska sektionen Institutionen för teknikvetenskaper Fasta tillståndets elektronik
Creator
- Sjöblom Gustaf 1975- , Uppsala universitet, Fasta tillståndets elektronik
Publisher
- Acta Universitatis Upsaliensis
Date
- 2006
- 2006-09-29
- 2006-09-08
- 2006-09-08
- 2006-09-29
- 2006
Providing institution
Aggregator
Rights statement for the media in this item (unless otherwise specified)
- http://rightsstatements.org/vocab/InC/1.0/
- http://rightsstatements.org/vocab/InC/1.0/
Identifier
- oai:DiVA.org:uu-7120
Format
- electronic55
- electronic
- 55
Language
- en
Is part of
- http://data.theeuropeanlibrary.org/Collection/a1041
Relations
- Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology1651-6214213
Year
- 2006
Providing country
- Sweden
Collection name
First time published on Europeana
- 2014-09-07T10:22:22.135Z
Last time updated from providing institution
- 2014-09-07T10:22:22.135Z